The measurements of the high - temperature current - voltage characteristicsof MoS2 thin - film transistors show that the devices remain functional totemperatures of at least as high as 500 K. The temperature increase results indecreased threshold voltage and mobility. The comparison of the DC and pulsemeasurements shows that the DC sub - linear and super - linear outputcharacteristics of MoS2 thin - films devices result from the Joule heating andthe interplay of the threshold voltage and mobility temperature dependences. Attemperatures above 450 K, an intriguing phenomenon of the "memory step" - akink in the drain current - occurs at zero gate voltage irrespective of thethreshold voltage value. The memory step effect was attributed to the slowrelaxation processes in thin films similar to those in graphene and electronglasses. The obtained results suggest new applications for MoS2 thin - filmtransistors in extreme - temperature electronics and sensors.
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